Datasheet > AO8800L

AO8800L

更新时间： 2024-10-30 14:50:11

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	114K
描述
Transistor

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技术参数
数据手册

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AO8800L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

AO8800L 数据手册

Rev 1: Nov 2004

AO8800, AO8800L ( Green Product )

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Features

The AO8800 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 1.8V while retaining a 12V V_GS(MAX)

rating. This device is suitable for use as a uni-directional or

bi-directional load switch, facilitated by its common-drain

configuration. AO8800L ( Green Product ) is offered in a

lead-free package.

V_DS(V) = 30V

I_D= 6.4A

R_DS(ON)< 24mΩ (V_GS= 10V)

R_DS(ON)< 30mΩ (V_GS= 4.5V)

R_DS(ON)< 40mΩ (V_GS= 2.5V)

R_DS(ON)< 70mΩ (V_GS= 1.8V)

TSSOP-8

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

±12

V_GS

T_A=25°C

T_A=70°C

6.4

I_D

5.4

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.5

P_D

Power Dissipation ^A

1.08

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

Steady-State

120

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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