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AO8800L PDF预览

AO8800L

更新时间: 2024-11-18 14:50:11
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
4页 114K
描述
Transistor

AO8800L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:NBase Number Matches:1

AO8800L 数据手册

 浏览型号AO8800L的Datasheet PDF文件第2页浏览型号AO8800L的Datasheet PDF文件第3页浏览型号AO8800L的Datasheet PDF文件第4页 
Rev 1: Nov 2004  
AO8800, AO8800L ( Green Product )  
Common-Drain Dual N-Channel Enhancement Mode Field  
Effect Transistor  
General Description  
Features  
The AO8800 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 1.8V while retaining a 12V VGS(MAX)  
rating. This device is suitable for use as a uni-directional or  
bi-directional load switch, facilitated by its common-drain  
configuration. AO8800L ( Green Product ) is offered in a  
lead-free package.  
VDS (V) = 30V  
ID = 6.4A  
RDS(ON) < 24m(VGS = 10V)  
RDS(ON) < 30m(VGS = 4.5V)  
RDS(ON) < 40m(VGS = 2.5V)  
RDS(ON) < 70m(VGS = 1.8V)  
TSSOP-8  
Top View  
D1  
D2  
1
2
3
4
8
7
6
5
D1/D2  
S1  
D1/D2  
S2  
S2  
S1  
G1  
G2  
G1  
G2  
S1  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
30  
±12  
V
V
VGS  
TA=25°C  
TA=70°C  
6.4  
ID  
5.4  
A
Pulsed Drain Current B  
IDM  
30  
TA=25°C  
TA=70°C  
1.5  
PD  
W
Power Dissipation A  
1.08  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
64  
89  
Max  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
83  
120  
70  
RθJA  
RθJL  
53  
Alpha & Omega Semiconductor, Ltd.  

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