Datasheet > AO8802

AO8802

更新时间： 2024-10-29 22:05:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	278K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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AO8802 数据手册

August 2002

AO8802

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Features

The AO8802 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. This device is suitable

for use as a uni-directional or bi-directional load

switch, facilitated by its common-drain configuration.

V_DS(V) = 20V

I_D= 8A

R_DS(ON)< 13mΩ (V_GS= 10V)

R_DS(ON)< 14mΩ (V_GS= 4.5V)

R_DS(ON)< 19mΩ (V_GS= 2.5V)

R_DS(ON)< 27mΩ (V_GS= 1.8V)

TSSOP-8

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

±12

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

T_A=25°C

T_A=70°C

6.3

I_D

I_DM

Pulsed Drain Current ^B

T_A=25°C

T_A=70°C

1.5

1.08

-55 to 150

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

120

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6

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