Datasheet > AO8803

AO8803

更新时间： 2024-06-27 12:13:18

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	956K
描述
TSSOP-8

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中文翻译

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数据手册

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AO8803 数据手册

AO8803

DUAL P-CHANNEL ENHANCEMENT MODE FET

FEATURES

 Ultra low on-resistance:V_DS=-12V,I_D=-7A,R_DS(ON)≤18mΩ@V_GS=-4.5V

 Low gate charge

 ESD protected

 Surface Mount device

TSSOP-8

MECHANICAL DATA



Case: TSSOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: not available

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

-12

±8

Unit

VDS

V_GS

T_A= 25°C

T_A= 70°C

-7

Continuous drain current

I_D

-5.8

-30

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

1.4

Power dissipation

0.9

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

T_J

T_STG

125

°C/W

°C

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source breakdown voltage

Zero gate voltage drain current

Symbol

V(BR)DSS*

Min

-12

Typ

Max

Unit

Conditions

VGS=0V, ID=250μA

-1

±1

±10

-1

I_DSS

μA V_DS=-9.6V,

VGS=0V

V^GS=±4.5V

V^GS=±8V

V_DS=0V,

Gate-body leakage current

I_GSS

μA V_DS=0V,

mΩ

-0.3 -0.55

-30

Gate-threshold voltage

On-State Drain Current

V_GS(th)

V =V , I =-250μA

I_D(ON)

V_DS=-5V,

V^GS=-4.5V

VGS=-4.5V, ID=-7A

-0.78

V =-4.5V,I =-7A,T =125°C

Drain-source on-resistance

R_DS(ON)*

V =-2.5V, I =-6A

VGS=-1.8V, ID=-5A

V =-1.5V, I =-1A

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

V =-5V, I =-4.7A

-1

-2.5

IS=-1A, VGS=0V

3960 4750

910

757

6.9

36.6

3.4

V_{DS=-6V, VGS=0V, f=1MHz}

8.5

V_{DS=0V, V}

=0V, f=1MHz

Q_g

VGS=-4.5V,VDS=-6V,ID=-7A

Q_gs

Q_gd

t_d(on)

t_r

VGS=-4.5V, VDS=-6V,

Turn-on rise time

t_d(off)

t_f

158

RGEN=3Ω,RL=0.86Ω

Turn-off delay time

Turn-off fall time

t_rr

Q_rr

19.4

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I =-7A, dI/dt=100A/ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

1 / 5

E-mail:hkt@heketai.com

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与AO8803相关器件

型号	品牌	获取价格	描述	数据表
AO8803L	AOS	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor
AO8804	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8804	FREESCALE	获取价格	Dual N-Channel Logical Level MOSFET Fast switching speed
AO8804	HOTTECH	获取价格	TSSOP-8
AO8804_09	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8804L	AOS	获取价格	Transistor
AO8806	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8806	HOTTECH	获取价格	TSSOP-8
AO8806_07	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8806L	AOS	获取价格	Transistor

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