是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.79 | 最大漏极电流 (Abs) (ID): | 7 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1.4 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
AO8807 | AOS |
类似代替 |
Dual P-Channel Enhancement Mode Field Effect Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AO8803L | AOS |
获取价格 |
Dual P-Channel Enhancement Mode Field Effect Transistor | |
AO8804 | AOS |
获取价格 |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
AO8804 | FREESCALE |
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Dual N-Channel Logical Level MOSFET Fast switching speed | |
AO8804 | HOTTECH |
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TSSOP-8 | |
AO8804_09 | AOS |
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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
AO8804L | AOS |
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Transistor | |
AO8806 | AOS |
获取价格 |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
AO8806 | HOTTECH |
获取价格 |
TSSOP-8 | |
AO8806_07 | AOS |
获取价格 |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
AO8806L | AOS |
获取价格 |
Transistor |