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AO8803

更新时间: 2024-11-01 03:18:55
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 116K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

AO8803 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.79最大漏极电流 (Abs) (ID):7 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.4 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

AO8803 数据手册

 浏览型号AO8803的Datasheet PDF文件第2页浏览型号AO8803的Datasheet PDF文件第3页浏览型号AO8803的Datasheet PDF文件第4页 
AO8803  
Dual P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO8803 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.8V. This  
device is suitable for use as a load switch or in PWM  
applications. It is ESD protected. Standard Product  
AO8803 is Pb-free (meets ROHS & Sony 259  
specifications). AO8803L is a Green Product ordering  
option. AO8803 and AO8803L are electrically  
identical.  
VDS (V) = -12V  
ID = -7 A (VGS = -4.5V)  
RDS(ON) < 18m(VGS = -4.5V)  
RDS(ON) < 22m(VGS = -2.5V)  
RDS(ON) < 29m(VGS = -1.8V)  
ESD Rating: 4KV HBM  
D1  
D2  
S2  
TSSOP-8  
Top View  
D2  
S2  
S2  
G2  
1
2
3
4
8
7
6
5
D1  
S1  
S1  
G1  
G1  
G2  
S1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-12  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±8  
-7  
V
A
TA=25°C  
TA=70°C  
ID  
-5.8  
Pulsed Drain Current B  
IDM  
-20  
TA=25°C  
TA=70°C  
1.4  
PD  
W
Power Dissipation A  
0.9  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
73  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
96  
125  
75  
Steady-State  
Steady-State  
RθJL  
63  
Alpha & Omega Semiconductor, Ltd.  

AO8803 替代型号

型号 品牌 替代类型 描述 数据表
AO8807 AOS

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Dual P-Channel Enhancement Mode Field Effect Transistor

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