Datasheet > AO8806

AO8806

更新时间： 2024-09-12 22:05:43

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	191K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO8806 技术参数

生命周期：	End Of Life	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.57
Base Number Matches：	1

AO8806 数据手册

Dec 2002

AO8806

Common-Drain Dual N-Channel Enhancement Mode Field Effect

Transistor

General Description

Features

The AO8806 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a uni-directional or bi-

directional load switch, facilitated by its common-

drain configuration.

V_DS(V) = 20V

I_D= 6 A

R_DS(ON)< 25mΩ (V_GS= 4.5V)

R_DS(ON)< 30mΩ (V_GS= 2.5V)

R_DS(ON)< 40mΩ (V_GS= 1.8V)

TSSOP-8

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

6.4

5.4

T_A=25°C

T_A=70°C

I_D

I_DM

Pulsed Drain Current ^B

T_A=25°C

T_A=70°C

1.5

1.08

-55 to 150

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

120

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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