Datasheet > AO8205

AO8205

更新时间： 2024-06-27 12:11:15

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	874K
描述
TSSOP-8

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数据手册

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AO8205 数据手册

8205

DUAL N-CHANNEL ENHANCEMENT MODE FET

FEATURES

 Ultra low on-resistance:V_DS=20V,I_D=5A,R_DS(ON)≤25mΩ@V_GS=4.5V

 Low gate charge

 ESD protected

 Surface Mount device

TSSOP-8

MECHANICAL DATA



Case: TSSOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: not available

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Continuous drain current T_A= 25°C

Pulsed drain current(Note 1)

Symbol

Value

Unit

V_GS

I_D

I_DM

P_D

±12

T_A= 25°C

T_A= 70°C

2.0

Power dissipation

1.6

Thermal resistance from Junction to ambient (Note 2)

Thermal resistance from Junction to case(Note 2)

Junction and Storage temperature

R_θ

T_J,T_STG

°C/W

°C

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Off Characteristics

Symbol

Min

Typ

Max

Unit

Conditions

VGS=0V, ID=250μA

V(BR)DSS*

Drain-Source breakdown voltage

Zero gate voltage drain current

±50

μA V_DS=20V,

^GS

=0V

I_DSS

VGS=0V,T_J= 55°C

nA V_DS=0V,

VGS=±8V

Gate-body leakage current

On Characteristics (Note 3)

I_GSS

Gate-threshold voltage

V_GS(th)

0.5

1.0

VDS=VGS, ID=250μA

mΩ VGS=4.5V, ID=5A

mΩ

Drain-source on-resistance

R_DS(ON)*

V =2.5V, I =4A

V^DS=5V, I^D=4.5A

V^DS=5V,V^GS=4.5V

Forward transconductance

On-state Drain Current

Drain-Source Diode Characteristics

g_FS

I_D(ON)

Diode forward voltage

Diode forward current

Dynamic Characteristics (Note4)

V_SD

I_S

0.75

1.2

IS=4.5A, VGS=0V

Input capacitance

Output capacitance

Reverse transfer capacitance

Switching Characteristics (Note 4)

C_iss

C_oss

C_rss

700

175

V_{DS=10V, VGS=4.5V, f=1MHz}

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Q_g

Q_gs

Q_gd

t_d(on)

t_r

1.2

1.9

V^GS=4.5V,V^DS=10V,I^D=3A

VGS=4.5V, VDS=10V,

t_d(off)

t_f

I^D=1A,RGEN=6Ω

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

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E-mail:hkt@heketai.com

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