Datasheet > AO8800

AO8800

更新时间： 2024-10-29 22:05:43

品牌	Logo	应用领域
阿尔法 - ALPHA		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	226K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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AO8800 数据手册

July 2001

AO8800

Common-Drain Dual N-Channel Enhancement Mode

Field Effect Transistor

General Description

Features

The AO8800 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. This device is

suitable for use as a uni-directional or bi-directional

load switch, facilitated by its common-drain

configuration.

V_DS(V) = 30V

I_D= 6.4A

_DS(ON)< 24mΩ (V_GS= 10V)

_DS(ON)< 30mΩ (V_GS= 4.5V)

_DS(ON)< 40mΩ (V_GS= 2.5V)

_DS(ON)< 70mΩ (V_GS= 1.8V)

TSSOP-8

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

±12

T_A=25°C

T_A=70°C

6.4

5.4

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.5

1.08

-55 to 150

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

120

t ≤ 10s

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6

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