Datasheet > AO8807

AO8807

更新时间： 2024-10-30 12:23:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	454K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

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AO8807 数据手册

AO8807

Dual P-Channel Enhancement Mode Field

Effect Transistor

General Description

The AO8807 uses advanced trench technology to

provide excellent R

_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807

and AO8807L are electrically identical.

- RoHS Compliant

-Halogen Free

Features

V_DS(V) = -12V

I_D= -6.5 A (V_GS= -4.5V)

R_DS(ON)< 20mΩ (V_GS= -4.5V)

R_DS(ON)< 24mΩ (V_GS= -2.5V)

R_DS(ON)< 30mΩ (V_GS= -1.8V)

TSSOP-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-12

V_GS

Gate-Source Voltage

±8

-6.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

-5

I_DM

-60

T_A=25°C

T_A=70°C

1.4

P_D

Power Dissipation ^B

0.9

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^AD

Maximum Junction-to-Lead

125

Steady-State

R_θJL

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与AO8807相关器件

型号	品牌	获取价格	描述	数据表
AO8807L	FREESCALE	获取价格	P-Channel 20-V (D-S) MOSFET High performance trench technology
AO8808	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO8808A	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO8808A	HOTTECH	获取价格	TSSOP-8
AO8808AL	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO8808L	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO8810	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8810	FREESCALE	获取价格	Dual N-Channel Logical Level MOSFET High performance trench technology
AO8810	HOTTECH	获取价格	TSSOP-8
AO8810_12	AOS	获取价格	20V Common-Drain Dual N-Channel MOSFET