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AO8804L PDF预览

AO8804L

更新时间: 2024-10-30 20:05:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
4页 141K
描述
Transistor

AO8804L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.81
Base Number Matches:1

AO8804L 数据手册

 浏览型号AO8804L的Datasheet PDF文件第2页浏览型号AO8804L的Datasheet PDF文件第3页浏览型号AO8804L的Datasheet PDF文件第4页 
AO8804  
Common-Drain Dual N-Channel Enhancement Mode Field  
Effect Transistor  
General Description  
Features  
The AO8804 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.8V while  
retaining a 12V VGS(MAX) rating. It is ESD protected.  
This device is suitable for use as a uni-directional or  
bi-directional load switch, facilitated by its common-  
drain configuration. Standard Product AO8804 is Pb-  
free (meets ROHS & Sony 259 specifications).  
VDS (V) = 20V  
ID = 8A (VGS = 10V)  
RDS(ON) < 13m(VGS = 10V)  
RDS(ON) < 14m(VGS = 4.5V)  
RDS(ON) < 15.5m(VGS = 3.8V)  
RDS(ON) < 19m(VGS = 2.5V)  
RDS(ON) < 27m(VGS = 1.8V)  
ESD Rating: 2000V HBM  
D2  
TSSOP-8  
Top View  
D1  
S1  
1
2
3
4
8
7
6
5
D1/D2  
S1  
D1/D2  
S2  
S2  
G1  
G2  
S1  
G1  
G2  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
8
V
A
TA=25°C  
TA=70°C  
ID  
6.3  
Pulsed Drain Current B  
IDM  
30  
TA=25°C  
TA=70°C  
1.5  
PD  
W
Power Dissipation A  
1.08  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
64  
Max  
83  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
89  
120  
70  
RθJL  
53  
Alpha & Omega Semiconductor, Ltd.  

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