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AO8801 PDF预览

AO8801

更新时间: 2024-11-21 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 108K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

AO8801 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.79
Base Number Matches:1

AO8801 数据手册

 浏览型号AO8801的Datasheet PDF文件第2页浏览型号AO8801的Datasheet PDF文件第3页浏览型号AO8801的Datasheet PDF文件第4页 
AO8801  
Dual P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO8801 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and operation  
with gate voltages as low as 1.8V. This device is  
suitable for use as a load switch or in PWM applications.  
It is ESD protected. Standard Product AO8801 is Pb-  
free (meets ROHS & Sony 259 specifications).  
AO8801L is a Green Product ordering option. AO8801  
and AO8801L are electrically identical.  
VDS (V) = -20V  
ID = -4.7 A (VGS = -4.5V)  
RDS(ON) < 42m(VGS = -4.5V)  
RDS(ON) < 53m(VGS = -2.5V)  
RDS(ON) < 70m(VGS = -1.8V)  
ESD Rating: 3000V HBM  
D
D2  
S2  
TSSOP-8  
Top View  
D2  
S2  
S2  
G2  
1
2
3
4
8
7
6
5
D1  
S1  
S1  
G1  
G1  
G2  
S1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-20  
±8  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
V
A
TA=25°C  
TA=70°C  
-4.7  
ID  
-3.7  
Pulsed Drain Current B  
IDM  
-30  
TA=25°C  
TA=70°C  
1.4  
PD  
W
Power Dissipation A  
0.9  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
73  
Max  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
90  
125  
75  
RθJA  
Steady-State  
Steady-State  
96  
RθJL  
63  
Alpha & Omega Semiconductor, Ltd.  

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