Datasheet > AO8804

AO8804

更新时间： 2024-06-27 12:13:37

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	691K
描述
TSSOP-8

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中文翻译

获取价格

数据手册

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AO8804 数据手册

AO8804

DUAL N-CHANNEL ENHANCEMENT MODE FET

FEATURES

 Ultra low on-resistance:V_DS=20V,I_D=8A,R_DS(ON)≤13mΩ@V_GS=10V

 Low gate charge

 ESD protected

 Surface Mount device

TSSOP-8

MECHANICAL DATA



Case: TSSOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: not available

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

±12

Unit

VDS

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

6.3

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

1.5

Power dissipation

1.08

120

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V(BR)DSS*

Min

Typ

Max

Unit

Conditions

VGS=0V, ID=250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-Source Breakdown Voltage

Gate-threshold voltage

I_DSS

I_GSS

±10

μA V_DS=16V,

μA V_DS=0V,

V^GS=±10V

VGS=0V

BV_GSO

V_GS(th)

±12

0.5

VDS=0V, IG=±250uA

0.75

V =V , I =250μA

On-State Drain Current

I_D(ON)*

V_DS=5V,

V^GS=4.5V

11.5

15.4

22.2

15.5

VGS=10V, ID=8A

V^GS=4.5V, I^D=5A

mΩ

Drain-source on-resistance

R_DS(ON)*

V^GS=3.8V, I^D=5A

VGS=2.5V, ID=4A

VGS=1.8V, ID=3A

V^DS=5V, I^D=8A

IS=1A, VGS=0V

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

0.73

2.4

1810

232

200

1.6

V_{DS=10V, VGS=0V, f=1MHz}

V_{DS=0V, V =0V, f=1MHz}

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Q_g

17.9

1.5

4.7

2.5

7.2

VGS=4.5V,VDS=10V,ID=8A

Q_gs

Q_gd

t_d(on)

t_r

VGS=10V, VDS=10V,

Turn-on rise time

t_d(off)

t_f

t_rr

RGEN=3Ω,RL=1.2Ω

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

10.8

20.2

I =8A, dI/dt=100A/ s

Q_rr

I^F=8A, dI/dt=100A/ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

1 / 5

E-mail:hkt@heketai.com

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中文翻译

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与AO8804相关器件

型号	品牌	获取价格	描述	数据表
AO8804_09	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8804L	AOS	获取价格	Transistor
AO8806	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8806	HOTTECH	获取价格	TSSOP-8
AO8806_07	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8806L	AOS	获取价格	Transistor
AO8807	AOS	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor
AO8807	FREESCALE	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor
AO8807	HOTTECH	获取价格	TSSOP-8
AO8807L	FREESCALE	获取价格	P-Channel 20-V (D-S) MOSFET High performance trench technology

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