Datasheet > AO8801

AO8801

更新时间： 2024-06-27 12:14:06

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	920K
描述
TSSOP-8

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中文翻译

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数据手册

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AO8801 数据手册

AO8801

DUAL P-CHANNEL ENHANCEMENT MODE FET

FEATURES

 Ultra low on-resistance:V_DS=-20V,I_D=-4.7A,R_DS(ON)≤42mΩ@V_GS=-4.5V

 Low gate charge

 ESD protected

 Surface Mount device

TSSOP-8

MECHANICAL DATA



Case: TSSOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: not available

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

-20

±8

Unit

VDS

V_GS

T_A= 25°C

T_A= 70°C

-4.7

-3.7

-30

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

1.4

Power dissipation

0.9

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

T_J

T_STG

125

°C/W

°C

150

Storage temperature

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source breakdown voltage

Zero gate voltage drain current

Symbol

V(BR)DSS*

Min

-20

Typ

Max

Unit

Conditions

V =0V, I =250μA

-1

±1

±10

-1

I_DSS

μA V_DS=-16V,

μA V_DS=0V,

V^GS=0V

V^GS=±4.5V

V_DS=0V,

VGS=±8V

Gate-body leakage current

I_GSS

-0.3 -0.55

Gate-threshold voltage

On-State Drain Current

V_GS(th)

V =V , I =-250μA

I_D(ON)

-25

mΩ

V_DS=-5V,

V^GS=-4.5V

V =-4.5V, I =-4.7A

V =-4.5V,I =-4.7A,T =125°C

Drain-source on-resistance

R_DS(ON)*

VGS=-2.5V, ID=-4A

V =-1.8V, I =-2A

-0.78

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

V =-5V, I =-4.7A

-1

-2.2

IS=-1A, VGS=0V

1450

205

160

6.5

17.2

1.3

4.5

9.5

V_{DS=-10V, VGS=0V, f=1MHz}

V_{DS=0V, V =0V, f=1MHz}

Q_g

VGS=-4.5V,VDS=-10V,ID=-4A

Q_gs

Q_gd

t_d(on)

t_r

VGS=-4.5V, VDS=-10V,

Turn-on rise time

t_d(off)

t_f

RGEN=3Ω,RL=2.5Ω

Turn-off delay time

Turn-off fall time

t_rr

Q_rr

13.8

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I =-4A, dI/dt=100A/ s

*Pulse test ; Pulse width ≤80µs, Duty cycle ≤ 0.5% .

1 / 5

E-mail:hkt@heketai.com

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与AO8801相关器件

型号	品牌	获取价格	描述	数据表
AO8801A	AOS	获取价格	20V P-Channel MOSFET
AO8801A	FREESCALE	获取价格	20V P-Channel MOSFET
AO8801A	HOTTECH	获取价格	TSSOP-8
AO8801L	AOS	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor
AO8802	ETC	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8803	AOS	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor
AO8803	FREESCALE	获取价格	P-Channel 20-V (D-S) MOSFET High performance trench technology
AO8803	HOTTECH	获取价格	TSSOP-8
AO8803L	AOS	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor
AO8804	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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