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AO8808L PDF预览

AO8808L

更新时间: 2024-10-30 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 110K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

AO8808L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:NBase Number Matches:1

AO8808L 数据手册

 浏览型号AO8808L的Datasheet PDF文件第2页浏览型号AO8808L的Datasheet PDF文件第3页浏览型号AO8808L的Datasheet PDF文件第4页 
AO8808  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO8808 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.  
This device is suitable for use as a uni-directional or bi-  
directional load switch, facilitated by its common-drain  
configuration. Standard Product AO8808 is Pb-free (meets  
ROHS & Sony 259 specifications). AO8808L is a Green  
Product ordering option. AO8808 and AO8808L are electrically  
identical.  
VDS (V) = 20V  
ID = 8A (VGS = 10V)  
RDS(ON) < 14m(VGS = 10V)  
RDS(ON) < 15m(VGS = 4.5V)  
RDS(ON) < 20m(VGS = 2.5V)  
RDS(ON) < 28m(VGS = 1.8V)  
TSSOP-8  
Top View  
D1  
D2  
1
2
3
4
8
7
6
5
D1  
S1  
S1  
G1  
D2  
S2  
S2  
G2  
G1  
G2  
S1  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
V
A
TA=25°C  
TA=70°C  
8
ID  
6.3  
Pulsed Drain Current B  
IDM  
30  
1.4  
TA=25°C  
TA=70°C  
PD  
W
Power Dissipation A  
1
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
73  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
96  
125  
75  
RθJL  
63  
Alpha & Omega Semiconductor, Ltd.  

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