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AO8807 PDF预览

AO8807

更新时间: 2024-11-01 12:54:07
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
5页 2067K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

AO8807 数据手册

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万和兴电子有限公司 www.whxpcb.com  
AO8807  
Dual P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO8807 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.8V. This  
device is suitable for use as a load switch. AO8807  
and AO8807L are electrically identical.  
VDS (V) = -12V  
ID = -6.5 A (VGS = -4.5V)  
RDS(ON) < 20m(VGS = -4.5V)  
RDS(Om(VGS = -2.5V)  
RD(VGS = -1.8V)  
- RoHS Compliant  
-Halogen Free  
D2  
TSSOP-8  
Top View  
D2  
S2  
S2  
G2  
1
2
3
4
8
7
6
5
D1  
S1  
S1  
G1  
Rg  
G2  
S1  
S2  
Absolute Maximum Ratingd  
Parameter  
Maximum  
Units  
Drain-Source Voltage  
-12  
V
Gate-Source Voltage  
±8  
-6.5  
V
A
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Pulsed Drain Current C  
ID  
-5  
IDM  
-60  
TA=25°C  
TA=70°C  
1.4  
PD  
W
Power Dissipation B  
0.9  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
73  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient AD  
Maximum Junction-to-Lead  
96  
125  
75  
Steady-State  
Steady-State  
RθJL  
63  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

AO8807 替代型号

型号 品牌 替代类型 描述 数据表
AO8803 AOS

类似代替

Dual P-Channel Enhancement Mode Field Effect Transistor

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