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AO7800 PDF预览

AO7800

更新时间: 2024-09-15 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 112K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

AO7800 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:1.93
Base Number Matches:1

AO7800 数据手册

 浏览型号AO7800的Datasheet PDF文件第2页浏览型号AO7800的Datasheet PDF文件第3页浏览型号AO7800的Datasheet PDF文件第4页 
AO7800  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO7800 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.8V, in the  
small SOT323 footprint. It can be used for a wide  
variety of applications, including load switching, low  
current inverters and low current DC-DC converters.It  
is ESD protected. Standard Product AO7800 is Pb-  
free (meets ROHS & Sony 259 specifications).  
AO7800L is a Green Product ordering option.  
AO7800 and AO7800L are electrically identical.  
VDS (V) = 20V  
ID = 0.9 A (VGS = 4.5V)  
RDS(ON) < 300m(VGS = 4.5V)  
RDS(ON) < 350m(VGS = 2.5V)  
RDS(ON) < 450m(VGS = 1.8V)  
SC-70-6  
(SOT-323)  
Top View  
D2  
S2  
D1  
S1  
D1  
G2  
S2  
S1  
G1  
G2  
G1  
D2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±8  
0.9  
V
A
TA=25°C  
TA=70°C  
ID  
0.7  
Pulsed Drain Current B  
IDM  
5
TA=25°C  
TA=70°C  
0.3  
PD  
W
Power Dissipation A  
0.19  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
360  
400  
300  
Max  
415  
460  
350  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
RθJL  
Alpha Omega Semiconductor, Ltd.  

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