Datasheet > AO8403L

AO8403L

更新时间： 2024-11-18 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	108K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO8403L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.6
Base Number Matches：	1

AO8403L 数据手册

AO8403

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO8403 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as

a load switch or in PWM applications. It is ESD

protected. Standard Product AO8403 is Pb-free (meets

ROHS & Sony 259 specifications). AO8403L is a Green

Product ordering option. AO8403 and AO8403L are

electrically identical.

V_DS(V) = -20V

I_D= -4 A (V_GS= -4.5V)

R_DS(ON)< 42mΩ (V_GS= -4.5V)

R_DS(ON)< 52mΩ (V_GS= -2.5V)

R_DS(ON)< 70mΩ (V_GS= -1.8V)

ESD Rating: 3000V HBM

TSSOP-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

T_A=25°C

T_A=70°C

-4

-3.5

I_D

Pulsed Drain Current ^B

I_DM

-30

T_A=25°C

T_A=70°C

1.5

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

120

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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