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AO8701 PDF预览

AO8701

更新时间: 2024-11-21 12:23:43
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体二极管晶体管场效应晶体管
页数 文件大小 规格书
5页 212K
描述
P-Channel Enhancement Mode Field Effect Transistor with Schcttky Diode

AO8701 数据手册

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AO8701, AO8701L  
P-Channel Enhancement Mode Field  
with Schcttky Diode  
Effect Transistor  
General Description  
The AO8701 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. A  
Schottky diode is provided to facilitate the  
implementation of a bidirectional blocking switch.  
AO8701L ( Green Product ) is offered in a lead-free  
package.  
Features  
VDS (V) = -30V  
ID = -4.2A  
RDS(ON) < 50m(VGS = 10V)  
R
DS(ON) < 65m(VGS = 4.5V)  
RDS(ON) < 120m(VGS = 2.5V)  
SCHOTTKY  
V
DS (V) = 30V, IF = 3A, VF=0.5V@1A  
D
S
K
A
1
2
3
4
8
7
6
5
D
S
S
K
A
A
A
G
G
TSSOP-8  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
MOSFET  
Schottky  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
-30  
V
V
VGS  
±12  
-4.2  
TA=25°C  
TA=70°C  
ID  
Continuous Drain CurrentA  
Pulsed Drain CurrentB  
A
-3.5  
-30  
IDM  
VKA  
Schottky reverse voltage  
30  
3
V
A
TA=25°C  
TA=70°C  
IF  
IFM  
Continuous Forward CurrentA  
Pulsed Forward CurrentB  
2
40  
1.4  
1
TA=25°C  
TA=70°C  
1.4  
1
PD  
W
°C  
Power Dissipation  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
-55 to 150  
Parameter: Thermal Characteristics MOSFET  
Symbol  
Typ  
Max  
Units  
Maximum Junction-to-AmbientA  
Maximum Junction-to-AmbientA  
73  
96  
63  
90  
t 10s  
RθJA  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
°C/W  
°C/W  
125  
75  
RθJL  
Thermal Characteristics Schottky  
Maximum Junction-to-AmbientA  
Maximum Junction-to-AmbientA  
Maximum Junction-to-LeadC  
Steady-State  
t 10s  
75  
90  
RθJA  
RθJL  
Steady-State  
97  
63  
125  
75  
1 / 5  
www.freescale.net.cn  

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