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AO7412 PDF预览

AO7412

更新时间: 2024-11-17 23:14:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 208K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO7412 技术参数

生命周期:Not Recommended包装说明:,
Reach Compliance Code:compliant风险等级:5.56
Base Number Matches:1

AO7412 数据手册

 浏览型号AO7412的Datasheet PDF文件第2页浏览型号AO7412的Datasheet PDF文件第3页浏览型号AO7412的Datasheet PDF文件第4页 
AO7412  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO7412 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V, in the  
small SOT323 footprint. It can be used for a wide  
variety of applications, including load switching, low  
current inverters and low current DC-DC converters.  
Standard Product AO7412 is Pb-free (meets ROHS  
& Sony 259 specifications). AO7412L is a Green  
Product ordering option. AO7412 and AO7412L are  
electrically identical.  
VDS (V) = 30V  
ID = 2.1 A (VGS = 10V)  
RDS(ON) < 90m(VGS = 10V)  
RDS(ON) < 100m(VGS = 4.5V)  
RDS(ON) < 160m(VGS = 2.5V)  
D
S
SC-70-6  
(SOT-323)  
Top View  
D
D
S
D
D
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
30  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
VGS  
±12  
TA=25°C  
TA=70°C  
2.1  
ID  
1.7  
A
Pulsed Drain Current B  
IDM  
10  
TA=25°C  
TA=70°C  
0.625  
0.4  
PD  
W
Power Dissipation A  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
175  
200  
130  
Max  
200  
250  
160  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
Alpha Omega Semiconductor, Ltd.  

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