Datasheet > AO7413_11

AO7413_11

更新时间： 2024-09-15 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	219K
描述
20V P-Channel MOSFET

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AO7413_11 数据手册

AO7413

20V P-Channel MOSFET

General Description

Product Summary

V_DS

-20V

The AO7413 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as

a load switch applications.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS= -10V)

R_DS(ON)(at V_GS= -4.5V)

R_DS(ON)(at V_GS= -2.5V)

-1.4A

< 113mΩ

< 135mΩ

< 180mΩ

Typical ESD protection

HBM Class 2

SC-70

(SOT-323)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-20

Gate-Source Voltage

V_GS

±12

-1.4

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

-1.2

Pulsed Drain Current ^C

I_DM

P_D

-13

T_A=25°C

T_A=70°C

0.35

°C

Power Dissipation ^B

0.22

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

300

350

280

Max

360

425

320

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 4: Nov 2011

www.aosmd.com

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