AO7413L

更新时间： 2024-09-15 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	112K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO7413L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

AO7413L 数据手册

AO7413

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO7413 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge, and operation with gate

voltages as low as 1.8V, in the small SOT323 footprint. It

can be used for a wide variety of applications, including load

switching, low current inverters and low current DC-DC

converters. It is ESD protected to 2KV HBM. Standard

Product AO7413 is Pb-free (meets ROHS & Sony 259

specifications). AO7413L is a Green Product ordering

option. AO7413 and AO7413L are electrically identical.

V_DS(V) = -20V

I_D= -1.4A (V_GS= -10V)

R_DS(ON)< 113mΩ (V_GS= -10V)

R_DS(ON)< 135mΩ (V_GS= -4.5V)

R_DS(ON)< 180mΩ (V_GS= -2.5V)

SC-70

(SOT-323)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

-1.4

T_A=25°C

T_A=70°C

I_D

-1.2

Pulsed Drain Current ^B

I_DM

-3

T_A=25°C

T_A=70°C

0.35

P_D

Power Dissipation ^A

0.22

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

300

350

280

Max

360

425

320

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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