Datasheet > AO7414L

AO7414L

更新时间： 2024-11-21 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	126K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO7414L 数据手册

AO7414

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO7414 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V, in the

small SOT-323 footprint. It can be used for a wide

variety of applications, including load switching, low

current inverters and low current DC-DC converters.

AO7414 and AO7414L are electrically identical.

-RoHS Compliant

V_DS(V) = 20V

I_D= 2 A (V_GS= 4.5V)

R_DS(ON)< 62mΩ (V_GS= 4.5V)

R_DS(ON)< 70mΩ (V_GS= 2.5V)

R_DS(ON)< 85mΩ (V_GS= 1.8V)

-AO7414L is Halogen Free

SC-70

(SOT-323)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

T_A=25°C

T_A=70°C

I_D

1.5

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

0.35

0.22

-55 to 150

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

300

340

280

Max

360

425

320

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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