Datasheet > AO7412_11

AO7412_11

更新时间： 2024-09-15 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	244K
描述
30V N-Channel MOSFET

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AO7412_11 数据手册

AO7412

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AO7412 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V, in the small SOT323 footprint. It

can be used for a wide variety of applications, including

load switching, low current inverters and low current DC-

DC converters.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

R_DS(ON)(at V_GS=2.5V)

1.7A

< 55mΩ

< 65mΩ

< 85mΩ

SC70-6L

(SOT363)

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

1.7

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

1.3

I_DM

P_D

T_A=25°C

T_A=70°C

0.35

°C

Power Dissipation ^B

0.22

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

360

425

320

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

300

340

280

R_θJA

Steady-State

R_θJL

Rev 2: August 2011

www.aosmd.com

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