Datasheet > AO7413

AO7413

更新时间： 2024-11-18 12:52:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	443K
描述
P-Channel 20-V (D-S) MOSFET High performance trench technology

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AO7413 数据手册

Freescale

AO7413 /MC7413

P-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V (V)

r_DS(on)(OHM)

I_D(A)

0.079 @V = -4.5V -1.7

-20

0.110 @V = -2.5V -1.5

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

SC70-3 saves board space

Fast switching speed

High performance trench technology

•

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-20

±8

-1.7

-1.4

T_A=25 C

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

T_A=70 C

I_DM

I_S

-2.5

Continuous Source Current (Diode Conduction)^a

±0.28

0.34

0.22

T_A=25 C

P_D

Power Dissipation

T_A=70 C

^oC

Operating Junction and Storage Temperature Range

T, T -55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 5 sec

Steady-State

375

430

Maximum Junction-to-Ambient^a

^oC/W

THJA

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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