Datasheet > AO7415L

AO7415L

更新时间： 2024-11-04 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	111K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AO7415L 数据手册

AO7415

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO7415 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge, and

operation with gate voltages as low as 2.5V, in the

small SOT363 footprint. It can be used for a wide

variety of applications, including load switching, low

current inverters and low current DC-DC converters.

It is ESD protected to 2KV HBM. Standard product

AO7415 is Pb-free (meets ROHS & Sony 259

specifications). AO7415L is a Green Product

ordering option. AO7415 and AO7415L are

electrically identical.

V_DS(V) = -20V

I_D= -2A (V_GS= -10V)

_DS(ON)< 100mΩ (V_GS= -10V)

R_DS(ON)< 125mΩ (V_GS= -4.5V)

_DS(ON)< 170mΩ (V_GS= -2.5V)

SC-70-6

(SOT-363)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

-2

T_A=25°C

T_A=70°C

I_D

-1.6

Pulsed Drain Current ^B

I_DM

-8

T_A=25°C

T_A=70°C

0.625

0.4

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

160

180

130

Max

200

220

160

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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