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AO7414 PDF预览

AO7414

更新时间: 2024-11-21 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 126K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO7414 数据手册

 浏览型号AO7414的Datasheet PDF文件第2页浏览型号AO7414的Datasheet PDF文件第3页浏览型号AO7414的Datasheet PDF文件第4页 
AO7414  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO7414 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.8V, in the  
small SOT-323 footprint. It can be used for a wide  
variety of applications, including load switching, low  
current inverters and low current DC-DC converters.  
AO7414 and AO7414L are electrically identical.  
-RoHS Compliant  
VDS (V) = 20V  
ID = 2 A (VGS = 4.5V)  
RDS(ON) < 62m(VGS = 4.5V)  
RDS(ON) < 70m(VGS = 2.5V)  
RDS(ON) < 85m(VGS = 1.8V)  
-AO7414L is Halogen Free  
SC-70  
(SOT-323)  
Top View  
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±8  
2
V
A
TA=25°C  
TA=70°C  
ID  
1.5  
Pulsed Drain Current B  
IDM  
25  
TA=25°C  
TA=70°C  
0.35  
0.22  
-55 to 150  
PD  
W
Power Dissipation A  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
300  
340  
280  
Max  
360  
425  
320  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
RθJL  
Alpha Omega Semiconductor, Ltd.  
www.aosmd.com  

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