Datasheet > AO7417

AO7417

更新时间： 2024-11-21 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	135K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AO7417 数据手册

AO7417

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO7417/L uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.5V, in the

small SOT363 footprint. This device is suitable for

use in buck convertor.

V_DS(V) = -20V

I_D= -2 A

(V_GS= -4.5V)

_DS(ON)< 80mΩ

_DS(ON)< 100mΩ (V_GS= -2.5V)

_DS(ON)< 125mΩ (V_GS= -1.8V)

_DS(ON)< 150mΩ (V_GS= -1.5V)

AO7417 and AO7417L are electrically identical.

-RoHS Compliant

-AO7417L is Halogen Free

SC-70-6

(SOT-363)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

10 Sec

Steady State

Units

V_DS

Drain-Source Voltage

-20

±8

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

T_A=25°C

T_A=70°C

-2

-1.9

-1.6

I_D

-1.7

Pulsed Drain Current ^B

I_DM

-20

T_A=25°C

T_A=70°C

0.63

0.4

0.57

0.36

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

160

180

130

Max

200

220

160

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

Alpha Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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