Datasheet > AO7407

AO7407

更新时间： 2024-11-17 22:05:43

品牌	Logo	应用领域
阿尔法 - ALPHA		晶体晶体管场效应晶体管开关光电二极管 PC
页数	文件大小	规格书
6页	227K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AO7407 数据手册

May 2003

AO7407

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO7407 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications.

V_DS(V) = -20V

I_D= -1.2 A

_DS(ON)< 135mΩ (V_GS= -4.5V)

_DS(ON)< 170mΩ (V_GS= -2.5V)

_DS(ON)< 220mΩ (V_GS= -1.8V)

SC-70

SOT 323

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

-1.2

-1.0

T_A=25°C

T_A=70°C

I_D

I_DM

Pulsed Drain Current ^B

-10

T_A=25°C

T_A=70°C

0.35

0.22

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

300

350

280

Max

360

425

320

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6

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