Datasheet > AO7411_10

AO7411_10

更新时间： 2024-11-18 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	359K
描述
20V P-Channel MOSFET

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AO7411_10 数据手册

AO7411

20V P-Channel MOSFET

General Description

Product Summary

V_DS

-20V

The AO7411 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with

gate voltages as low as 1.8V. This device is suitable for

use as a load switch or in PWM applications.

I_D(at V_GS=-4.5V)

-1.8A

_DS(ON)(at V_GS=-4.5V)

_DS(ON)(at V_GS=-2.5V)

_DS(ON)(at V_GS=-1.8V)

< 120mΩ

< 150mΩ

< 200mΩ

SSCC--7700--66

((SSOOTT--332233))

TToopp VViieeww

BBoottttoomm VViieeww

TToopp VViieeww

PPiinn11

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-20

Gate-Source Voltage

V_GS

±8

-1.8

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

-1.5

Pulsed Drain Current ^C

I_DM

P_D

-10

T_A=25°C

T_A=70°C

0.63

°C

Power Dissipation ^B

0.4

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

200

220

160

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

160

180

130

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

Rev 4: July 2010

www.aosmd.com

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