Datasheet > AO7411L

AO7411L

更新时间： 2024-11-18 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	108K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO7411L 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.58	配置：	Single
最大漏极电流 (Abs) (ID)：	1.8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.625 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

AO7411L 数据手册

AO7411

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO7411 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO7411 is Pb-free

(meets ROHS & Sony 259 specifications). AO7411L

is a Green Product ordering option. AO7411 and

AO7411L are electrically identical.

V_DS(V) = -20V

I_D= -1.8 A (V_GS= -4.5V)

R_DS(ON)< 120mΩ (V_GS= -4.5V)

R_DS(ON)< 150mΩ (V_GS= -2.5V)

R_DS(ON)< 200mΩ (V_GS= -1.8V)

SC-70-6

(SOT 323)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

-1.8

T_A=25°C

T_A=70°C

I_D

-1.5

Pulsed Drain Current ^B

I_DM

-10

T_A=25°C

T_A=70°C

0.625

0.4

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

160

180

130

Max

200

220

160

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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