Datasheet > AO7408_10

AO7408_10

更新时间： 2024-09-13 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	355K
描述
20V N-Channel MOSFET

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AO7408_10 数据手册

AO7408

20V N-Channel MOSFET

General Description

Product Summary

V_DS

20V

The AO7408 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with

gate voltages as low as 1.8V. This device is suitable for

use as a load switch or in PWM applications.

I_D(at V_GS=10V)

_DS(ON)(at V_GS=4.5V)

_DS(ON)(at V_GS=2.5V)

_DS(ON)(at V_GS=1.8V)

< 62mΩ

< 75mΩ

< 85mΩ

SSCC--7700--66

((SSOOTT--332233))

Topp VViieeww

BBoottttoomm VViieeww

TToopp VViieeww

PPiinn11

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

1.5

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

0.35

0.22

-55 to 150

°C

Power Dissipation ^B

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

300

340

280

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

360

425

320

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

Rev 3: July 2010

www.aosmd.com

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