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AO7408

更新时间: 2024-10-30 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 109K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO7408 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:1.8配置:Single
最大漏极电流 (Abs) (ID):2 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.35 W
子类别:FET General Purpose Power表面贴装:YES

AO7408 数据手册

 浏览型号AO7408的Datasheet PDF文件第2页浏览型号AO7408的Datasheet PDF文件第3页浏览型号AO7408的Datasheet PDF文件第4页 
AO7408  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO7408 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.8V, in the  
small SOT323 footprint. It can be used for a wide  
variety of applications, including load switching, low  
current inverters and low current DC-DC converters.  
Standard Product AO7408 is Pb-free (meets ROHS  
& Sony 259 specifications). AO7408L is a Green  
Product ordering option. AO7408 and AO7408L are  
electrically identical.  
VDS (V) = 20V  
ID = 2.2 A (VGS = 4.5V)  
RDS(ON) < 82m(VGS = 4.5V)  
RDS(ON) < 95m(VGS = 2.5V)  
RDS(ON) < 120m(VGS = 1.8V)  
D
S
SC-70-6  
(SOT-323)  
Top View  
D
D
S
D
D
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
20  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
VGS  
±8  
TA=25°C  
TA=70°C  
2.2  
ID  
1.75  
A
Pulsed Drain Current B  
IDM  
10  
TA=25°C  
TA=70°C  
0.625  
0.4  
PD  
W
Power Dissipation A  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
160  
180  
130  
Max  
200  
220  
160  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
Alpha Omega Semiconductor, Ltd.  

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