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AO7411

更新时间: 2024-10-30 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 108K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO7411 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.79配置:Single
最大漏极电流 (Abs) (ID):1.8 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.625 W
子类别:Other Transistors表面贴装:YES

AO7411 数据手册

 浏览型号AO7411的Datasheet PDF文件第2页浏览型号AO7411的Datasheet PDF文件第3页浏览型号AO7411的Datasheet PDF文件第4页 
AO7411  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO7411 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.8V. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO7411 is Pb-free  
(meets ROHS & Sony 259 specifications). AO7411L  
is a Green Product ordering option. AO7411 and  
AO7411L are electrically identical.  
VDS (V) = -20V  
ID = -1.8 A (VGS = -4.5V)  
RDS(ON) < 120m(VGS = -4.5V)  
RDS(ON) < 150m(VGS = -2.5V)  
RDS(ON) < 200m(VGS = -1.8V)  
D
S
SC-70-6  
(SOT 323)  
Top View  
D
D
S
D
D
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-20  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±8  
-1.8  
V
A
TA=25°C  
TA=70°C  
ID  
-1.5  
Pulsed Drain Current B  
IDM  
-10  
TA=25°C  
TA=70°C  
0.625  
0.4  
PD  
W
Power Dissipation A  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
160  
180  
130  
Max  
200  
220  
160  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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