Datasheet > AO7410_12

AO7410_12

更新时间： 2024-10-30 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	235K
描述
30V N-Channel MOSFET

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AO7410_12 数据手册

AO7410

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AO7410 uses advanced trench technology to

provide excellent R_DS(ON), very low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

R_DS(ON)(at V_GS=2.5V)

1.7A

< 55mΩ

< 65mΩ

< 85mΩ

SC-70

(SOT-323)

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

1.7

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

1.3

I_DM

P_D

T_A=25°C

T_A=70°C

0.35

°C

Power Dissipation ^B

0.22

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

300

340

280

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

360

425

320

R_θJA

Steady-State

R_θJL

Rev 5: Dec. 2012

www.aosmd.com

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