AO3413

更新时间： 2024-02-11 17:48:20

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管开关光电二极管
页数	文件大小	规格书
6页	223K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO3413 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.78

AO3413 数据手册

June 2003

AO3413

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO3413 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications.

V_DS(V) = -20V

I_D= -3 A

R_DS(ON)< 97mΩ (V_GS= -4.5V)

R_DS(ON)< 130mΩ (V_GS= -2.5V)

R_DS(ON)< 190mΩ (V_GS= -1.8V)

TO-236

(SOT-23)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

-3

-2.4

T_A=25°C

T_A=70°C

I_D

I_DM

Pulsed Drain Current ^B

-15

T_A=25°C

T_A=70°C

1.4

0.9

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

100

Max

125

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6

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