5秒后页面跳转
AO3414 PDF预览

AO3414

更新时间: 2024-11-21 12:53:31
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 120K
描述
VDS (V) = 20V ID= 4.2A (VGS=4.5V) RDS(ON) 50m (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V)

AO3414 数据手册

 浏览型号AO3414的Datasheet PDF文件第2页 
TransistIoCrs  
Product specification  
KO3414(AO3414)  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
Features  
3
VDS (V) = 20V  
ID = 4.2A (VGS=4.5V)  
RDS(ON)  
RDS(ON)  
RDS(ON)  
50m (VGS = 4.5V)  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
63m (VGS = 2.5V)  
87m (VGS = 1.8V)  
+0.1  
1.9  
-0.1  
1. Gate  
2. Source  
3. Drain  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Rating  
Unit  
V
20  
8
Gate-Source Voltage  
VGS  
V
4.2  
Continuous Drain TA=25  
ID  
A
3.2  
Current *1  
TA=70  
Pulsed Drain Current *2  
IDM  
PD  
15  
1.4  
Power Dissipation *1 TA=25  
TA=70  
W
0.9  
Themal Resistance.Junction-to-Ambient *1  
Themal Resistance.Junction-to-Case  
Junction and Storage Temperature Range  
RthJA  
RthJC  
125  
80  
/W  
/W  
TJ, TSTG  
-55 to 150  
*1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.  
Copper, in a still air environment with TA =25  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  

与AO3414相关器件

型号 品牌 获取价格 描述 数据表
AO3414 (KO3414) KEXIN

获取价格

N-Channel MOSFET
AO3414_10 AOS

获取价格

20V N-Channel MOSFET
AO3414A UMW

获取价格

漏源电压(Vdss):20V;持续漏极电流(Id)(在25°C时):4.2A;栅极-源极阈
AO3414L AOS

获取价格

N-Channel Enhancement Mode Field Effect Transistor
AO3415 AOS

获取价格

20V P-Channel MOSFET
AO3415 FREESCALE

获取价格

P-Channel 20-V (D-S) MOSFET Fast switching speed
AO3415 HC

获取价格

SOT-23
AO3415 KEXIN

获取价格

P-Channel MOSFET
AO3415 HOTTECH

获取价格

SOT-23
AO3415_11 AOS

获取价格

20V P-Channel MOSFET