AO3415AL

更新时间： 2024-11-18 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	269K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO3415AL 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.55
Is Samacsys：	N	Base Number Matches：	1

AO3415AL 数据手册

AO3415AL

P-Channel Enhancement Mode

Field Effect Transistor

General Description

Product Summary

Parameter

The AO3415AL uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 1.8V. This device is suitable

for use as a load switch applications.

V_DS

-20V

-4A

I_D(at V_GS=-4.5V)

R_DS(ON)(at V_GS= -4.5V)

R_DS(ON)(at V_GS= -2.5V)

R_DS(ON)(at V_GS= -1.8V)

< 45mΩ

< 54mΩ

< 68mΩ

- RoHS Compliant

- Halogen Free

ESD Protected

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-20

Units

Drain-Source Voltage

V_GS

Gate-Source Voltage

±8

T_A=25°C

T_A=70°C

Pulsed Drain Current ^C

-4

-3.5

Continuous Drain

Current

I_D

I_DM

-30

T_A=25°C

T_A=70°C

1.5

P_D

Power Dissipation ^B

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

100

Steady-State

R_θJL

Rev 0: January 2009

www.aosmd.com

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