Datasheet > AO3416

AO3416

更新时间： 2024-06-27 12:12:42

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	562K
描述
SOT-23

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数据手册

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AO3416 数据手册

AO3416

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Ultra low on-resistance:V_DS=20V,R_DS(ON)≤22mΩ@V_GS=4.5V,I_D=6.5A

 ESD protected

 For Load switch and PWM applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

V_GS

I_D

Value

±8

6.5

5.2

Unit

Gate-source voltage

TA=25°C

TA=70°C

Continuous drain current

I_D

Pulsed drain current

IDM

TA=25°C

P_D

1.4

0.9

125

150

°C/W

°C

Power dissipation

TA=70°C

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

Storage temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V(BR)DSS*

I_DSS

I_GSS

V_GS(th)

uA V_DS=20V,

V =0V

mΩ

KΩ

±10

1.1

V_DS=0V,

V =±8V

0.4

0.7

V =V , I =250μA

VGS=4.5V, ID=6.5A

VGS=2.5V, ID=5.5A

Drain-source on-resistance)

R_DS(ON)

V =1.8V, I =5A

I_D(ON)

g_FS

R_g

V_DS=5V, VGS=4.5V

VDS=5V, ID=6.5A

VGS=0V, VDS=0V, f=1MHz

On-State Drain Current

Forward transconductance

Gate resistance

1.8

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Q_g

Q_gs

Q_gd

V_SD

I_S

t_rr

Q_rr

1295 1650 pF

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Total gate charge

Gate-source charge

V_{DS=10V, VGS=0V, f=1MHz}

160

280

328

3.78

2.24

4.2

2.6

0.62

nS VDS=10V, VGS=4.5V,

RGEN=3Ω, RL=1.54Ω

VDS=10V,VGS=4.5V,ID=6.5A

Gate-drain charge

Diode forward voltage

Diode forward current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

IS=1A, VGS=0V

6.8

nS IF=6.5A, dI/dt=100A/us

nC IF=6.5A, dI/dt=100A/us

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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