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AO3420 PDF预览

AO3420

更新时间: 2024-01-04 03:04:24
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 186K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO3420 数据手册

 浏览型号AO3420的Datasheet PDF文件第2页浏览型号AO3420的Datasheet PDF文件第3页浏览型号AO3420的Datasheet PDF文件第4页 
AO3420  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3420 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.8V while  
retaining a 12V VGS(MAX) rating. This device is  
suitable for use as a uni-directional or bi-directional  
load switch. Standard Product AO3420 is Pb-free  
(meets ROHS & Sony 259 specifications). AO3420L  
is a Green Product ordering option. AO3420 and  
AO3420L are electrically identical.  
VDS (V) = 20V  
ID = 6 A (VGS = 10V)  
RDS(ON) < 24m(VGS = 10V)  
RDS(ON) < 27m(VGS = 4.5V)  
RDS(ON) < 42m(VGS = 2.5V)  
RDS(ON) < 55m(VGS = 1.8V)  
TO-236  
(SOT-23)  
Top View  
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
V
A
TA=25°C  
TA=70°C  
6
ID  
5
25  
Pulsed Drain Current B  
IDM  
TA=25°C  
TA=70°C  
1.4  
PD  
W
Power Dissipation A  
0.9  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
70  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
100  
63  
125  
80  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

AO3420 替代型号

型号 品牌 替代类型 描述 数据表
AO3420L AOS

类似代替

N-Channel Enhancement Mode Field Effect Transistor
SI2312CDS-T1-GE3 VISHAY

功能相似

TRANSISTOR 6000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL

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