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AO3419 PDF预览

AO3419

更新时间: 2024-11-18 12:51:15
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管开关光电二极管
页数 文件大小 规格书
5页 287K
描述
20V P-Channel MOSFET

AO3419 数据手册

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AO3419  
20V P-Channel MOSFET  
General Description  
The AO3419 uses advanced trench technology to provi  
de excellent R  
DS(ON), low gate charge and operation with gate  
voltages as low as 2.5V. This device is suitable for use as  
a load switch applications.  
Features  
VDS  
-20V  
ID (at VGS=-10V)  
RDS(ON) (at VGS= -10V)  
RDS(ON) (at VGS= -4.5V)  
-3.5A  
< 85m  
< 102mΩ  
< 140mΩ  
RDS(ON) (at VGS= -2.5V)  
Typical ESD protection  
HBM Class 2  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
-20  
V
Gate-Source Voltage  
VGS  
±12  
-3.5  
V
A
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
ID  
-2.8  
Pulsed Drain Current C  
IDM  
PD  
-17  
TA=25°C  
TA=70°C  
1.4  
W
°C  
Power Dissipation B  
0.9  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
65  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
85  
125  
60  
RθJL  
43  
1 / 5  
www.freescale.net.cn  

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