AO3422
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3422 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. It
offers operation over a wide gate drive range from
2.5V to 12V. This device is suitable for use as a load
switch. Standard product AO3422 is Pb-free (meets
ROHS & Sony 259 specifications). AO3422L is a
Green Product ordering option. AO3422 and
AO3422L are electrically identical.
VDS (V) = 55V
ID = 2.1A (VGS = 4.5V)
R
R
DS(ON) < 160mΩ (VGS = 4.5V)
DS(ON) < 200mΩ (VGS = 2.5V)
D
TO-236
(SOT-23)
Top View
G
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
55
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
VGS
±12
TA=25°C
TA=70°C
2.1
1.7
ID
A
Pulsed Drain Current B
IDM
10
TA=25°C
TA=70°C
1.25
PD
W
Power Dissipation
0.8
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
75
Max
100
150
60
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
115
48
RθJL
Alpha & Omega Semiconductor, Ltd.