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AO3422_10 PDF预览

AO3422_10

更新时间: 2024-11-20 12:51:27
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 182K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO3422_10 数据手册

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AO3422  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3422 uses advanced trench technology to  
VDS (V) = 55V  
provide excellent RDS(ON) and low gate charge. It offers  
operation over a wide gate drive range from 2.5V to  
12V. This device is suitable for use as a load switch.  
ID = 2.1A (VGS = 4.5V)  
R
R
DS(ON) < 160m(VGS = 4.5V)  
DS(ON) < 200m(VGS = 2.5V)  
SOT23  
D
Top View  
Bottom View  
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
55  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
2.1  
V
A
TA=25°C  
TA=70°C  
ID  
1.7  
Pulsed Drain Current B  
IDM  
10  
TA=25°C  
TA=70°C  
1.25  
0.8  
PD  
W
Power Dissipation  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
75  
Max  
100  
150  
60  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
115  
48  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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