5秒后页面跳转
AO3422 PDF预览

AO3422

更新时间: 2024-10-15 18:09:51
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
6页 621K
描述
SOT-23

AO3422 数据手册

 浏览型号AO3422的Datasheet PDF文件第2页浏览型号AO3422的Datasheet PDF文件第3页浏览型号AO3422的Datasheet PDF文件第4页浏览型号AO3422的Datasheet PDF文件第5页浏览型号AO3422的Datasheet PDF文件第6页 
AO3422  
LOW VOLTAGE MOSFET (N-CHANNEL)  
FEATURES  
Ultra low on-resistance:VDS=55V,RDS(ON)≤160mΩ@VGS=4.5V,ID=2.1A  
For PWM application  
For Load switch application  
Surface Mount device  
SOT-23  
MECHANICAL DATA  
Case: SOT-23  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.008 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Drain-source voltage  
Symbol  
VDS  
VGS  
ID  
Value  
55  
±12  
2.1  
1.7  
Unit  
V
Gate-source voltage  
V
A
A
TA=25°C  
TA=70°C  
Continuous drain current  
ID  
Pulsed drain current  
IDM  
10  
A
*
TA=25°C  
PD  
PD  
1.25  
0.8  
125  
W
W
°C/W  
°C  
°C  
Power dissipation  
TA=70°C  
Thermal resistance from Junction to ambient  
Junction temperature  
RθJA  
TJ  
150  
-55 ~+150  
Storage temperature  
TSTG  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
VGS=0V, ID=10mA  
55  
V
Drain-Source breakdown voltage  
Zero gate voltage drain current  
Gate-body leakage current  
Gate-threshold voltage  
V(BR)DSS*  
IDSS  
IGSS  
*
*
1
uA VDS=44V,  
V =0V  
GS  
±100 nA  
VDS=0V,  
GS  
V =±12V  
VGS(th)  
*
0.6  
1.3  
80  
2
V
V =V , I =250μA  
DS  
GS  
D
VGS=10 V, ID=2.1A  
m
105  
Ω
Drain-source on-resistance  
RDS(ON)  
*
VGS=4.5V, ID=2.1A  
m
90  
125  
Ω
ID(ON)  
gFS  
Rg  
Ciss  
Coss  
Crss  
td(on)  
tr  
td(off)  
tf  
Qg  
Qgs  
Qgd  
VSD  
IS  
*
10  
A
S
Ω
pF  
pF  
pF  
nS  
VDS=5V, VGS=4.5V  
VDS=5V, ID=2.1A  
VGS=0V, VDS=0V, f=1MHz  
On-State Drain Current  
Forward transconductance  
Gate resistance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Turn-on rise time  
Turn-off delay time  
Turn-off fall time  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Diode forward voltage  
Diode forward current  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
11  
1.3  
214  
31  
12.6  
2.3  
2.4  
16.5  
2
2.6  
0.6  
0.8  
0.78  
3
300  
VDS=25V, VGS=0V, f=1MHz  
nS VDS=27.5V, VGS=10V,  
RGEN=3Ω, RL=12Ω  
nS  
nS  
nC  
nC  
nC  
V
3.3  
VDS=27.5V,VGS=4.5V,  
ID=2.1A  
1
1
30  
IS=1A, VGS=0V  
A
trr  
Qrr  
20  
17  
nS IF=2.1A, dI/dt=100A/us  
nC IF=2.1A, dI/dt=100A/us  
*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .  
1 / 6  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

与AO3422相关器件

型号 品牌 获取价格 描述 数据表
AO3422 (KO3422) KEXIN

获取价格

N-Channel MOSFET
AO3422_10 AOS

获取价格

N-Channel Enhancement Mode Field Effect Transistor
AO3422A UMW

获取价格

种类:N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25°C时
AO3422L AOS

获取价格

N-Channel Enhancement Mode Field Effect Transistor
AO3423 AOS

获取价格

P-Channel Enhancement Mode Field Effect Transistor
AO3423 FREESCALE

获取价格

20V P-Channel MOSFET
AO3423 HC

获取价格

SOT-23-3
AO3423 KEXIN

获取价格

P-Channel MOSFET
AO3423 HOTTECH

获取价格

SOT-23
AO3423 (KO3423) KEXIN

获取价格

P-Channel MOSFET