Datasheet > AO3421_11

AO3421_11

更新时间： 2024-09-25 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	240K
描述
30V P-Channel MOSFET

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AO3421_11 数据手册

AO3421

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO3421 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. This device is

suitable for use as a load switch or in PWM applications.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

-2.6A

< 110mΩ

< 180mΩ

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-2.6

Continuous Drain

Current

I_D

-2.2

Pulsed Drain Current ^C

I_DM

P_D

-20

T_A=25°C

T_A=70°C

1.4

°C

Power Dissipation ^B

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

100

125

R_θJL

Rev 4: May 2011

www.aosmd.com

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