Datasheet > AO3421E

AO3421E

更新时间： 2024-01-08 11:21:08

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	314K
描述
30V P-Channel MOSFET

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AO3421E 数据手册

AO3421E

30V P-Channel MOSFET

General Description

Product Summary

V_DS

The AO3421E combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

-30V

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

-3A

< 95mΩ

< 160mΩ

Typical ESD protection

HBM Class 2

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±20

-3

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

-2

Pulsed Drain Current ^C

I_DM

P_D

-18

T_A=25°C

T_A=70°C

1.4

°C

Power Dissipation ^B

0.9

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

100

125

R_θJL

Rev 0: April 2012

www.aosmd.com

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