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AO3422

更新时间: 2024-11-18 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
4页 133K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO3422 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
HTS代码:8541.29.00.95风险等级:1.7
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:575280Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:AO3422Samacsys Released Date:2019-05-30 09:26:20
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏源导通电阻:0.16 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):10 A表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AO3422 数据手册

 浏览型号AO3422的Datasheet PDF文件第2页浏览型号AO3422的Datasheet PDF文件第3页浏览型号AO3422的Datasheet PDF文件第4页 
AO3422  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3422 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. It  
offers operation over a wide gate drive range from  
2.5V to 12V. This device is suitable for use as a load  
switch. Standard product AO3422 is Pb-free (meets  
ROHS & Sony 259 specifications). AO3422L is a  
Green Product ordering option. AO3422 and  
AO3422L are electrically identical.  
VDS (V) = 55V  
ID = 2.1A (VGS = 4.5V)  
R
R
DS(ON) < 160mΩ (VGS = 4.5V)  
DS(ON) < 200mΩ (VGS = 2.5V)  
D
TO-236  
(SOT-23)  
Top View  
G
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
55  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
VGS  
±12  
TA=25°C  
TA=70°C  
2.1  
1.7  
ID  
A
Pulsed Drain Current B  
IDM  
10  
TA=25°C  
TA=70°C  
1.25  
PD  
W
Power Dissipation  
0.8  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
75  
Max  
100  
150  
60  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
115  
48  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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