AO3419
LOW VOLTAGE MOSFET (P-CHANNEL)
FEATURES
VDS=-20V,RDS(ON)≤85mΩ@VGS=-10V,ID=-3.5A
Low on-resistance and low gate charge
For Load switch applications
ESD protected
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Drain-source voltage
Symbol
VDS
Value
-20
Unit
V
Gate-source voltage
VGS
±12
V
TA=25°C
TA=70°C
-3.5
-2.8
A
A
Continuous drain current
ID
Pulsed drain current
IDM
PD
-17
1.4
0.9
A
W
W
TA=25°C
TA=70°C
Power dissipation
Thermal resistance from Junction to ambient
Junction temperature
Storage temperature
RθJA
TJ
TSTG
125
150
-55~+150
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage
Symbol Min Typ
Max Unit
Conditions
V(BR)DSS*
-20
V
GS
D
V =0V, I =-250μA
IDSS
IGSS
*
*
-1
μA VDS=-20V,
VGS=0V
VGS=±12V
VDS=VGS, ID=-250μA
±10
-0.5 -0.85 -1.2
-17
μA VDS=0V,
V
A
VGS(th)
ID(ON)*
*
On state drain current
V =-4.5V, V =-5V
VGS=-10V, ID=-3.5A
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-1A
GS
DS
71
85
112
85
102
140
mΩ
mΩ
mΩ
mΩ
S
Drain-source on-resistance
RDS(ON)
*
168
GS
D
V =-1.8V, I =-0.5A
VDS=-5V, ID=-3.5A
VDS=0V,
gFS
Rg
8.6
11.2
Forward transconductance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total gate charge
Gate-source charge
Gate-drain charge
Diode forward voltage
Diode forward current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
17
400
85
Ω
pF
pF
VGS=0V, f=1MHz
Ciss
Coss
Crss
td(on)
tr
250 325
VDS=-10V, VGS=0V, f=1MHz
40
22
63
37
52
pF
11
5.5
22
nS
nS VGS=-10V,VDS=-10V,
RGEN=3Ω,RL=2.8Ω
td(off)
tf
nS
nS
nC
nC
nC
V
8
Qg
3.1
0.6
1.1
-0.76
4.4
VDS=-10V,VGS=-4.5V,ID=-3.5A
Qgs
Qgd
VSD
IS
-1
IS=-1A, VGS=0V
-1.5
A
trr
11
nS
nC
IF=-3.5A,dI/dt=100A/μs
Qrr
4.3
* Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .
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