AO3419

更新时间： 2024-02-21 04:04:40

品牌	Logo	应用领域
美国万代 - AOS		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
5页	317K
描述
20V P-Channel MOSFET

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中文翻译

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技术参数
数据手册
替代型号

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AO3419 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.55
Is Samacsys：	N	Base Number Matches：	1

AO3419 数据手册

AO3419

20V P-Channel MOSFET

General Description

Product Summary

V_DS

-20V

The AO3419 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as

a load switch applications.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS= -10V)

R_DS(ON)(at V_GS= -4.5V)

R_DS(ON)(at V_GS= -2.5V)

-3.5A

< 85mΩ

< 102mΩ

< 140mΩ

Typical ESD protection

HBM Class 2

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-20

Gate-Source Voltage

V_GS

±12

-3.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

-2.8

Pulsed Drain Current ^C

I_DM

P_D

-17

T_A=25°C

T_A=70°C

1.4

°C

Power Dissipation ^B

0.9

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

125

R_θJL

Rev 5: Nov 2011

www.aosmd.com

Page 1 of 5

12 3 4 5

中文翻译

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AO3419 替代型号

型号	品牌	替代类型	描述	数据表
FDN342P	FAIRCHILD	功能相似	P-Channel 2.5V Specified PowerTrench⑩ MOSFET
FDN340P	FAIRCHILD	功能相似	Single P-Channel, Logic Level, PowerTrench MOSFET
NTR4101PT1G	ONSEMI	功能相似	Trench Power MOSFET −20 V, Single P−Channel, SOT−23

与AO3419相关器件

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AO3420L	AOS	获取价格	N-Channel Enhancement Mode Field Effect Transistor
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