Datasheet > AO3414_10

AO3414_10

更新时间： 2024-02-22 12:44:53

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	430K
描述
20V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AO3414_10 数据手册

AO3414

20V N-Channel MOSFET

General Description

Features

The AO3414 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications.

V_DS= 20V

I_D= 3A

R_DS(ON)< 62mΩ

R_DS(ON)< 70mΩ

R_DS(ON)< 85mΩ

(V_GS= 4.5V)

(V_GS= 2.5V)

(V_GS= 1.8V)

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

2.5

Continuous Drain

Current ^A

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.4

P_D

°C

Power Dissipation ^A

0.9

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

100

125

Maximum Junction-to-Lead ^C

R_θJL

Rev 7: July 2010

www.aosmd.com

Page 1 of 5

12 3 4 5

中文翻译

下载PDF

与AO3414_10相关器件

型号	品牌	获取价格	描述	数据表
AO3414A	UMW	获取价格	漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°C时）:4.2A;栅极-源极阈
AO3414L	AOS	获取价格	N-Channel Enhancement Mode Field Effect Transistor
AO3415	AOS	获取价格	20V P-Channel MOSFET
AO3415	FREESCALE	获取价格	P-Channel 20-V (D-S) MOSFET Fast switching speed
AO3415	HC	获取价格	SOT-23
AO3415_11	AOS	获取价格	20V P-Channel MOSFET
AO3415A	AOS	获取价格	20V P-Channel MOSFET
AO3415A	UMW	获取价格	漏源电压（Vdss）:-20V;持续漏极电流（Id）（在25°C时）:-4A;栅极-源极阈
AO3415A_11	AOS	获取价格	20V P-Channel MOSFET
AO3415AL	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor