Datasheet > AO3415A_11

AO3415A_11

更新时间： 2024-11-21 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	325K
描述
20V P-Channel MOSFET

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AO3415A_11 数据手册

AO3415A

20V P-Channel MOSFET

General Description

Product Summary

V_DS

-20V

The AO3415A uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 1.8V. This device is suitable

for use as a load switch applications.

I_D(at V_GS=-4.5V)

R_DS(ON)(at V_GS= -4.5V)

R_DS(ON)(at V_GS= -2.5V)

R_DS(ON)(at V_GS= -1.8V)

-4A

< 41mΩ

< 53mΩ

< 65mΩ

ESD protected

SOT23

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

-20

_GS

±8

T_A=25°C

T_A=70°C

-4

-3.5

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

P_D

-30

T_A=25°C

T_A=70°C

1.5

°C

Power Dissipation ^B

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

100

R_θJL

Rev 2: Sep 2011

www.aosmd.com

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