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AO3415
MC3415A
Freescale
Analog Power
AM2327P
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
ID (A)
0.052 @ VGS = -4.5V
0.072 @ VGS = -2.5V
0.120 @ VGS = -1.8V
-3.6
-3.1
-2.7
-20
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
G
•
Miniature SOT-23 Surface Mount Package
Saves Board Space
D
•
•
Fast switching speed
High performance trench technology
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame ter Symbol Ratings Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
±8
V
TA=25oC
TA=70oC
-3.6
-1.8
-10
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
IDM
IS
A
±0.46
1.25
0.8
TA=25oC
TA=70oC
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RTHJA
Maximum
100
Units
oC/W
t <= 5 sec
Steady-State
Maximum Junction-to-Ambienta
150
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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